Byung J. Choi
Seoul, Republic of Korea
Last Updated: 09/26/2026
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Found 23 publications
Neurological Emergencies in Incarcerated Patients: Clinical Characteristics, Severity, and Outcomes in an Emergency Department with an Embedded Neuro-Emergency Expert Model.
Journal: Brain sciences
Published: August 29, 2025
Electronic threshold switching of As-embedded SiO2 selectors: charged oxygen vacancy model.
Journal: Nano convergence
Published: November 19, 2024
Ultrahigh Stability and Operation Performance in Bi-doped GeTe/Sb2Te3 Superlattices Achieved by Tailoring Bonding and Structural Properties.
Journal: ACS nano
Published: September 03, 2024
Promotion of Probabilistic Bit Generation in Mott Devices by Embedded Metal Nanoparticles.
Journal: Advanced materials (Deerfield Beach, Fla.)
Published: February 18, 2024
Embedded metallic nanoparticles facilitate metastability of switchable metallic domains in Mott threshold switches.
Journal: Nature communications
Published: September 06, 2021
Gastric cancer exosomes contribute to the field cancerization of gastric epithelial cells surrounding gastric cancer.
Journal: Gastric cancer : official journal of the International Gastric Cancer Association and the Japanese Gastric Cancer Association
Published: July 13, 2021
Effect of Ag Concentration Dispersed in HfOx Thin Films on Threshold Switching.
Journal: Nanoscale research letters
Published: September 06, 2019
Effect of Electrode Material on the Crystallization of GeTe Grown by Atomic Layer Deposition for Phase Change Random Access Memory.
Journal: Micromachines
Published: March 25, 2019
Characteristics of atomic layer deposited Gd2O3 on n-GaN with an AlN layer.
Journal: RSC advances
Published: November 26, 2018
Thickness Dependence on Interfacial and Electrical Properties in Atomic Layer Deposited AlN on c-plane GaN.
Journal: Nanoscale research letters
Published: May 30, 2018
Scalable excitatory synaptic circuit design using floating gate based leaky integrators.
Journal: Scientific reports
Published: July 20, 2017
Roles of conducting filament and non-filament regions in the Ta2O5 and HfO2 resistive switching memory for switching reliability.
Journal: Nanoscale
Published: April 27, 2017
Last Updated: 09/26/2026