Furqan Zahoor

Seri Iskandar, 32610, Malaysia

Last Updated: 09/26/2026

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Found 9 publications

Energy-efficient neuromorphic system using novel tunnel FET based LIF neuron design for adaptable threshold logic and image analysis applications.

Energy-efficient neuromorphic system using novel tunnel FET based LIF neuron design for adaptable threshold logic and image analysis applications.

Journal: Scientific reports

Published: February 05, 2025

Optimized nano-scaled drain- and gate-engineered Schottky barrier MOSFET with improved ambipolarity and RF characteristics.

Optimized nano-scaled drain- and gate-engineered Schottky barrier MOSFET with improved ambipolarity and RF characteristics.

Journal: Nanoscale advances

Published: May 08, 2024

An overview of critical applications of resistive random access memory.

An overview of critical applications of resistive random access memory.

Journal: Nanoscale advances

Published: February 26, 2024

Ternary Full Adder Designs Employing Unary Operators and Ternary Multiplexers.

Ternary Full Adder Designs Employing Unary Operators and Ternary Multiplexers.

Journal: Micromachines

Published: April 07, 2023

A review of piezoelectric MEMS sensors and actuators for gas detection application.

A review of piezoelectric MEMS sensors and actuators for gas detection application.

Journal: Discover nano

Published: November 17, 2022

Resistive random access memory: introduction to device mechanism, materials and application to neuromorphic computing.

Resistive random access memory: introduction to device mechanism, materials and application to neuromorphic computing.

Journal: Discover nano

Published: September 25, 2022

Statistical Simulation of the Switching Mechanism in ZnO-Based RRAM Devices.

Statistical Simulation of the Switching Mechanism in ZnO-Based RRAM Devices.

Journal: Materials (Basel, Switzerland)

Published: November 29, 2021

Ternary Arithmetic Logic Unit Design Utilizing Carbon Nanotube Field Effect Transistor (CNTFET) and Resistive Random Access Memory (RRAM).

Ternary Arithmetic Logic Unit Design Utilizing Carbon Nanotube Field Effect Transistor (CNTFET) and Resistive Random Access Memory (RRAM).

Journal: Micromachines

Published: August 23, 2021

Resistive Random Access Memory (RRAM): an Overview of Materials, Switching Mechanism, Performance, Multilevel Cell (mlc) Storage, Modeling, and Applications.

Resistive Random Access Memory (RRAM): an Overview of Materials, Switching Mechanism, Performance, Multilevel Cell (mlc) Storage, Modeling, and Applications.

Journal: Nanoscale research letters

Published: September 19, 2019

Showing 1-9 of 9

Last Updated: 09/26/2026