Hongxia M. Liu
Key Laboratory For Wide Band Gap Semiconductor Materials And Devices Of Education, Xi'an 710071, People's Republic Of China
Xi'an, 710126, China
Xi'an, 710126, China
Last Updated: 09/26/2026
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Found 109 publications
An Ag/Al2O3/Ga2O3/Pt bilayer memristor with low power consumption for neuromorphic applications.
Journal: Nanotechnology
Published: May 22, 2026
A voltage-controlled reconfigurable memristor with dual-mode synaptic plasticity for adaptive neuromorphic computing and mechanism analysis.
Journal: Nanotechnology
Published: May 18, 2026
Electro-Thermal Reliability Analysis and Performance Evaluation of a 1.2-kV Cascode GaN HEMT for High-Power-Density Applications.
Journal: Nanotechnology
Published: March 29, 2026
Algorithm prediction of lifetime under high-power microwave based on T-type field plate HEMTs.
Journal: Nanotechnology
Published: March 20, 2026
Research on structural reinforcement of AlGaN/GaN HEMT devices under RF stress.
Journal: Nanotechnology
Published: February 13, 2026
A Symmetric U-Shaped Gate Tunnel FET-ISFET Hybrid Label-Free Biosensor for Highly Sensitive DNA Detection.
Journal: Sensors (Basel, Switzerland)
Published: January 15, 2026
Mechanism analysis and protection design of GaN HEMTs induced by high-power microwave pulse.
Journal: Nanotechnology
Published: December 13, 2025
Degradation and Damage Effects in GaN HEMTs Induced by Low-Duty-Cycle High-Power Microwave Pulses.
Journal: Micromachines
Published: September 17, 2025
Last Updated: 09/26/2026