Jialei Miao

38 Zheda Road
Hangzhou, 310027, China

Last Updated: 09/26/2026

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Found 9 publications

Color and orientation feature-attention sensors for efficient recognition.

Color and orientation feature-attention sensors for efficient recognition.

Journal: Science advances
Published: July 31, 2026

High-Performance Self-Powered Vertical MoTe2 p-i-n Photodiode for Near-Infrared Detection and Spike Encoding.

High-Performance Self-Powered Vertical MoTe2 p-i-n Photodiode for Near-Infrared Detection and Spike Encoding.

Journal: ACS nano
Published: February 18, 2026

Lateral Electric Field Engineering in Scaled Transistors Based on 2D Materials via Phase Transition.

Lateral Electric Field Engineering in Scaled Transistors Based on 2D Materials via Phase Transition.

Journal: ACS nano
Published: May 12, 2025

Improvement of P-Type Contact in WSe2 Field-Effect Transistors via Defect Engineering.

Improvement of P-Type Contact in WSe2 Field-Effect Transistors via Defect Engineering.

Journal: Nano letters
Published: February 04, 2025

All-2D-Materials Subthreshold-Free Field-Effect Transistor with Near-Ideal Switching Slope.

All-2D-Materials Subthreshold-Free Field-Effect Transistor with Near-Ideal Switching Slope.

Journal: ACS nano
Published: July 29, 2024

Boosting responsivity and speed in 2D material based vertical p-i-n photodiodes with excellent self-powered ability.

Boosting responsivity and speed in 2D material based vertical p-i-n photodiodes with excellent self-powered ability.

Journal: Nature communications
Published: July 14, 2024

A "Click" Reaction to Engineer MoS2 Field-Effect Transistors with Low Contact Resistance.

A "Click" Reaction to Engineer MoS2 Field-Effect Transistors with Low Contact Resistance.

Journal: ACS nano
Published: December 01, 2022

Carrier Modulation in 2D Transistors by Inserting Interfacial Dielectric Layer for Area-Efficient Computation.

Carrier Modulation in 2D Transistors by Inserting Interfacial Dielectric Layer for Area-Efficient Computation.

Journal: Small (Weinheim an der Bergstrasse, Germany)
Published: November 03, 2022

Recent Progress in Contact Engineering of Field-Effect Transistor Based on Two-Dimensional Materials.

Recent Progress in Contact Engineering of Field-Effect Transistor Based on Two-Dimensional Materials.

Journal: Nanomaterials (Basel, Switzerland)
Published: September 30, 2022
Showing 1-9 of 9

Last Updated: 09/26/2026