Mianzeng Zhong
Hunan Key Laboratory Of Nanophotonics And Devices
Changsha, 410083, China
Changsha, 410083, China
Last Updated: 09/26/2026
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Found 33 publications
Gate-Tunable GeSe/MoSe2 Heterojunctions for In-Sensor Image Processing.
Journal: The journal of physical chemistry letters
Published: June 04, 2026
Highly Efficient and Anisotropic Second Harmonic Generation in BiInSe Alloy Nanowire and ReS2/BiInSe Heterostructures.
Journal: The journal of physical chemistry letters
Published: April 09, 2026
Polarization-Programmable 2D Sb2S2O Photodetectors for High-Precision Object Identification.
Journal: The journal of physical chemistry letters
Published: February 03, 2026
Broadband Phototransistors Enabled by Dual Transport Channels in Topological Insulator Bi2Te2Se.
Journal: ACS nano
Published: January 14, 2026
Ultrawide and Self-Powered PbS Quantum Dots/4H-SiC Nanopillar Array Heterojunction Photodetector and Its Application in the Light Power Density Recognition System.
Journal: The journal of physical chemistry letters
Published: December 16, 2025
Wafer-Scale Bias/Gate Voltage Dual Modulation High-Performance 4H-SiC MOSFET Ultraviolet Photodetector.
Journal: The journal of physical chemistry letters
Published: October 30, 2025
A high-performance broadband polarization-sensitive photodetector based on BiSeS nanowires.
Journal: Nanoscale
Published: March 19, 2025
Controllable Synthesis of WSe2-WS2 Lateral Heterostructures via Atomic Substitution.
Journal: ACS nano
Published: October 22, 2024
Rolling up 2D WSe2 Nanosheets to 1D Anisotropic Nanoscrolls for Polarization-Sensitive Photodetectors.
Journal: Small (Weinheim an der Bergstrasse, Germany)
Published: June 14, 2024
Last Updated: 09/26/2026