Moritz Brehm
Linz, 4040, Austria
Last Updated: 09/26/2026
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Found 20 publications
Ge Epitaxy at Ultralow Growth Temperatures Enabled by a Pristine Growth Environment.
Journal: ACS applied electronic materials
Published: September 23, 2024
Telecom Light-Emitting Diodes Based on Nanoconfined Self-Assembled Silicon-Based Color Centers.
Journal: ACS photonics
Published: September 03, 2024
All-Epitaxial Self-Assembly of Silicon Color Centers Confined Within Sub-Nanometer Thin Layers Using Ultra-Low Temperature Epitaxy.
Journal: Advanced materials (Deerfield Beach, Fla.)
Published: June 13, 2024
Single SiGe quantum dot emission deterministically enhanced in a high-Q photonic crystal resonator.
Journal: Optics express
Published: May 09, 2023
Composition Dependent Electrical Transport in Si1-x Gex Nanosheets with Monolithic Single-Elementary Al Contacts.
Journal: Small (Weinheim an der Bergstrasse, Germany)
Published: July 07, 2022
Advanced preparation of plan-view specimens on a MEMS chip for in situ TEM heating experiments.
Journal: MRS bulletin
Published: December 03, 2021
Photoluminescence enhancement by deterministically site-controlled, vertically stacked SiGe quantum dots.
Journal: Scientific reports
Published: September 09, 2021
SiGe quantum well infrared photodetectors on strained-silicon-on-insulator.
Journal: Optics express
Published: November 06, 2019
Enhanced Telecom Emission from Single Group-IV Quantum Dots by Precise CMOS-Compatible Positioning in Photonic Crystal Cavities.
Journal: ACS photonics
Published: December 29, 2016
Last Updated: 09/26/2026