Patrick Fiorenza

Catania, 95121, Italy

Last Updated: 09/26/2026

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Found 22 publications

Insights into ALD Growth of Al-Based Dielectric Stack on 4H-SiC.

Insights into ALD Growth of Al-Based Dielectric Stack on 4H-SiC.

Journal: Nanomaterials (Basel, Switzerland)

Published: May 29, 2026

Impact of the Schottky Barrier and Contact-Induced Strain Variations inside the Channel on the Electrical Behavior of Monolayer MoS2 Transistors.

Impact of the Schottky Barrier and Contact-Induced Strain Variations inside the Channel on the Electrical Behavior of Monolayer MoS2 Transistors.

Journal: Small science

Published: April 23, 2025

4H-SiC MOSFET Threshold Voltage Instability Evaluated via Pulsed High-Temperature Reverse Bias and Negative Gate Bias Stresses.

4H-SiC MOSFET Threshold Voltage Instability Evaluated via Pulsed High-Temperature Reverse Bias and Negative Gate Bias Stresses.

Journal: Materials (Basel, Switzerland)

Published: March 22, 2024

Large-Area MoS2 Films Grown on Sapphire and GaN Substrates by Pulsed Laser Deposition.

Large-Area MoS2 Films Grown on Sapphire and GaN Substrates by Pulsed Laser Deposition.

Journal: Nanomaterials (Basel, Switzerland)

Published: October 03, 2023

Al2O3 Layers Grown by Atomic Layer Deposition as Gate Insulator in 3C-SiC MOS Devices.

Al2O3 Layers Grown by Atomic Layer Deposition as Gate Insulator in 3C-SiC MOS Devices.

Journal: Materials (Basel, Switzerland)

Published: August 01, 2023

Nanotechnology for Electronic Materials and Devices.

Nanotechnology for Electronic Materials and Devices.

Journal: Nanomaterials (Basel, Switzerland)

Published: September 07, 2022

Structural and Insulating Behaviour of High-Permittivity Binary Oxide Thin Films for Silicon Carbide and Gallium Nitride Electronic Devices.

Structural and Insulating Behaviour of High-Permittivity Binary Oxide Thin Films for Silicon Carbide and Gallium Nitride Electronic Devices.

Journal: Materials (Basel, Switzerland)

Published: December 17, 2021

Multiscale Investigation of the Structural, Electrical and Photoluminescence Properties of MoS2 Obtained by MoO3 Sulfurization.

Multiscale Investigation of the Structural, Electrical and Photoluminescence Properties of MoS2 Obtained by MoO3 Sulfurization.

Journal: Nanomaterials (Basel, Switzerland)

Published: December 03, 2021

Highly Homogeneous Current Transport in Ultra-Thin Aluminum Nitride (AlN) Epitaxial Films on Gallium Nitride (GaN) Deposited by Plasma Enhanced Atomic Layer Deposition.

Highly Homogeneous Current Transport in Ultra-Thin Aluminum Nitride (AlN) Epitaxial Films on Gallium Nitride (GaN) Deposited by Plasma Enhanced Atomic Layer Deposition.

Journal: Nanomaterials (Basel, Switzerland)

Published: November 02, 2021

Status and Prospects of Cubic Silicon Carbide Power Electronics Device Technology.

Status and Prospects of Cubic Silicon Carbide Power Electronics Device Technology.

Journal: Materials (Basel, Switzerland)

Published: July 20, 2021

Selective Doping in Silicon Carbide Power Devices.

Selective Doping in Silicon Carbide Power Devices.

Journal: Materials (Basel, Switzerland)

Published: June 13, 2021

Gold nanoparticle assisted synthesis of MoS2 monolayers by chemical vapor deposition.

Gold nanoparticle assisted synthesis of MoS2 monolayers by chemical vapor deposition.

Journal: Nanoscale advances

Published: May 18, 2021

Showing 1-12 of 22

Last Updated: 09/26/2026