Salvatore Di Franco

Zona Industriale I, 95121, Italy

Last Updated: 09/26/2026

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Found 13 publications

Impact of the Schottky Barrier and Contact-Induced Strain Variations inside the Channel on the Electrical Behavior of Monolayer MoS2 Transistors.

Impact of the Schottky Barrier and Contact-Induced Strain Variations inside the Channel on the Electrical Behavior of Monolayer MoS2 Transistors.

Journal: Small science

Published: April 23, 2025

Al2O3 Layers Grown by Atomic Layer Deposition as Gate Insulator in 3C-SiC MOS Devices.

Al2O3 Layers Grown by Atomic Layer Deposition as Gate Insulator in 3C-SiC MOS Devices.

Journal: Materials (Basel, Switzerland)

Published: August 01, 2023

A Low Temperature Growth of Cu2O Thin Films as Hole Transporting Material for Perovskite Solar Cells.

A Low Temperature Growth of Cu2O Thin Films as Hole Transporting Material for Perovskite Solar Cells.

Journal: Materials (Basel, Switzerland)

Published: October 06, 2022

Growth, Electronic and Electrical Characterization of Ge-Rich Ge-Sb-Te Alloy.

Growth, Electronic and Electrical Characterization of Ge-Rich Ge-Sb-Te Alloy.

Journal: Nanomaterials (Basel, Switzerland)

Published: March 18, 2022

Multiscale Investigation of the Structural, Electrical and Photoluminescence Properties of MoS2 Obtained by MoO3 Sulfurization.

Multiscale Investigation of the Structural, Electrical and Photoluminescence Properties of MoS2 Obtained by MoO3 Sulfurization.

Journal: Nanomaterials (Basel, Switzerland)

Published: December 03, 2021

Radiation Hardness of 4H-SiC P-N Junction UV Photo-Detector.

Radiation Hardness of 4H-SiC P-N Junction UV Photo-Detector.

Journal: Materials (Basel, Switzerland)

Published: November 23, 2021

Highly Homogeneous Current Transport in Ultra-Thin Aluminum Nitride (AlN) Epitaxial Films on Gallium Nitride (GaN) Deposited by Plasma Enhanced Atomic Layer Deposition.

Highly Homogeneous Current Transport in Ultra-Thin Aluminum Nitride (AlN) Epitaxial Films on Gallium Nitride (GaN) Deposited by Plasma Enhanced Atomic Layer Deposition.

Journal: Nanomaterials (Basel, Switzerland)

Published: November 02, 2021

Correlation between Defects and Electrical Performances of Ion-Irradiated 4H-SiC p-n Junctions.

Correlation between Defects and Electrical Performances of Ion-Irradiated 4H-SiC p-n Junctions.

Journal: Materials (Basel, Switzerland)

Published: March 16, 2021

Ohmic Contacts on p-Type Al-Implanted 4H-SiC Layers after Different Post-Implantation Annealings.

Ohmic Contacts on p-Type Al-Implanted 4H-SiC Layers after Different Post-Implantation Annealings.

Journal: Materials (Basel, Switzerland)

Published: September 09, 2019

Advances in the fabrication of graphene transistors on flexible substrates.

Advances in the fabrication of graphene transistors on flexible substrates.

Journal: Beilstein journal of nanotechnology

Published: September 15, 2016

Impact of contact resistance on the electrical properties of MoS2 transistors at practical operating temperatures.

Impact of contact resistance on the electrical properties of MoS2 transistors at practical operating temperatures.

Journal: Beilstein journal of nanotechnology

Published: September 14, 2016

Nanoscale probing of the lateral homogeneity of donors concentration in nitridated SiO2/4H-SiC interfaces.

Nanoscale probing of the lateral homogeneity of donors concentration in nitridated SiO2/4H-SiC interfaces.

Journal: Nanotechnology

Published: June 22, 2016

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Last Updated: 09/26/2026