Stefano Cecchi

Berlin, BE 10117, Germany

Last Updated: 09/26/2026

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Found 14 publications

Electronic Properties and Stacking Ordering in Layered GeTe-Rich (GeTe) m (Sb2Te3) n.

Electronic Properties and Stacking Ordering in Layered GeTe-Rich (GeTe) m (Sb2Te3) n.

Journal: ACS applied electronic materials

Published: June 09, 2025

Thick Does the Trick: Genesis of Ferroelectricity in 2D GeTe-Rich (GeTe)m (Sb2 Te3 )n Lamellae.

Thick Does the Trick: Genesis of Ferroelectricity in 2D GeTe-Rich (GeTe)m (Sb2 Te3 )n Lamellae.

Journal: Advanced science (Weinheim, Baden-Wurttemberg, Germany)

Published: August 04, 2023

Geometry of tellurene adsorbed on the Si(111)-R30°-Sb surface from first principles calculations.

Geometry of tellurene adsorbed on the Si(111)-R30°-Sb surface from first principles calculations.

Journal: Physical chemistry chemical physics : PCCP

Published: July 27, 2022

Crystallization and Electrical Properties of Ge-Rich GeSbTe Alloys.

Crystallization and Electrical Properties of Ge-Rich GeSbTe Alloys.

Journal: Nanomaterials (Basel, Switzerland)

Published: December 29, 2021

Author Correction: Modulation of van der Waals and classical epitaxy induced by strain at the Si step edges in GeSbTe alloys.

Author Correction: Modulation of van der Waals and classical epitaxy induced by strain at the Si step edges in GeSbTe alloys.

Journal: Scientific reports

Published: March 21, 2018

Ferroelectric Control of the Spin Texture in GeTe.

Ferroelectric Control of the Spin Texture in GeTe.

Journal: Nano letters

Published: January 31, 2018

Modulation of van der Waals and classical epitaxy induced by strain at the Si step edges in GeSbTe alloys.

Modulation of van der Waals and classical epitaxy induced by strain at the Si step edges in GeSbTe alloys.

Journal: Scientific reports

Published: January 23, 2017

Role of interfaces on the stability and electrical properties of Ge2Sb2Te5 crystalline structures.

Role of interfaces on the stability and electrical properties of Ge2Sb2Te5 crystalline structures.

Journal: Scientific reports

Published: January 13, 2017

Corrigendum: Metal - Insulator Transition Driven by Vacancy Ordering in GeSbTe Phase Change Materials.

Corrigendum: Metal - Insulator Transition Driven by Vacancy Ordering in GeSbTe Phase Change Materials.

Journal: Scientific reports

Published: August 17, 2016

Strong confinement-induced engineering of the g factor and lifetime of conduction electron spins in Ge quantum wells.

Strong confinement-induced engineering of the g factor and lifetime of conduction electron spins in Ge quantum wells.

Journal: Nature communications

Published: March 11, 2016

Metal-Insulator Transition Driven by Vacancy Ordering in GeSbTe Phase Change Materials.

Metal-Insulator Transition Driven by Vacancy Ordering in GeSbTe Phase Change Materials.

Journal: Scientific reports

Published: December 11, 2015

Structural investigations of the α12 Si-Ge superstructure.

Structural investigations of the α12 Si-Ge superstructure.

Journal: Journal of applied crystallography

Published: November 14, 2014

Showing 1-12 of 14

Last Updated: 09/26/2026