Wen-bin B. Jian

Hsinchu, TNQ, Taiwan

Last Updated: 09/26/2026

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Found 16 publications

A highly hydroxylated 6-tin oxide cluster serves as an efficient e-beam and EUV-photoresist to achieve high-resolution patterns.

A highly hydroxylated 6-tin oxide cluster serves as an efficient e-beam and EUV-photoresist to achieve high-resolution patterns.

Journal: Nanoscale advances

Published: August 06, 2024

Two-Dimensional Bis(dithiolene)iron(II) Self-Powered UV Photodetectors with Ultrahigh Air Stability.

Two-Dimensional Bis(dithiolene)iron(II) Self-Powered UV Photodetectors with Ultrahigh Air Stability.

Journal: Advanced science (Weinheim, Baden-Wurttemberg, Germany)

Published: February 09, 2021

Layer-Dependent and In-Plane Anisotropic Properties of Low-Temperature Synthesized Few-Layer PdSe2 Single Crystals.

Layer-Dependent and In-Plane Anisotropic Properties of Low-Temperature Synthesized Few-Layer PdSe2 Single Crystals.

Journal: ACS nano

Published: April 03, 2020

Solution-processed organometallic quasi-two-dimensional nanosheets as a hole buffer layer for organic light-emitting devices.

Solution-processed organometallic quasi-two-dimensional nanosheets as a hole buffer layer for organic light-emitting devices.

Journal: Nanoscale

Published: March 25, 2020

A Versatile Method to Enhance the Operational Current of Air-Stable Organic Gas Sensor for Monitoring of Breath Ammonia in Hemodialysis Patients.

A Versatile Method to Enhance the Operational Current of Air-Stable Organic Gas Sensor for Monitoring of Breath Ammonia in Hemodialysis Patients.

Journal: ACS sensors

Published: March 21, 2019

A Triode Device with a Gate Controllable Schottky Barrier: Germanium Nanowire Transistors and Their Applications.

A Triode Device with a Gate Controllable Schottky Barrier: Germanium Nanowire Transistors and Their Applications.

Journal: Small (Weinheim an der Bergstrasse, Germany)

Published: February 16, 2019

High Mobilities in Layered InSe Transistors with Indium-Encapsulation-Induced Surface Charge Doping.

High Mobilities in Layered InSe Transistors with Indium-Encapsulation-Induced Surface Charge Doping.

Journal: Advanced materials (Deerfield Beach, Fla.)

Published: June 11, 2018

Reversible and Precisely Controllable p/n-Type Doping of MoTe2 Transistors through Electrothermal Doping.

Reversible and Precisely Controllable p/n-Type Doping of MoTe2 Transistors through Electrothermal Doping.

Journal: Advanced materials (Deerfield Beach, Fla.)

Published: November 30, 2017

Nanocontact Disorder in Nanoelectronics for Modulation of Light and Gas Sensitivities.

Nanocontact Disorder in Nanoelectronics for Modulation of Light and Gas Sensitivities.

Journal: Scientific reports

Published: March 19, 2015

Exposure of the hidden anti-ferromagnetism in paramagnetic CdSe:Mn nanocrystals.

Exposure of the hidden anti-ferromagnetism in paramagnetic CdSe:Mn nanocrystals.

Journal: ACS nano

Published: January 01, 2015

Strong enhancement of Raman scattering from a bulk-inactive vibrational mode in few-layer MoTe₂.

Strong enhancement of Raman scattering from a bulk-inactive vibrational mode in few-layer MoTe₂.

Journal: ACS nano

Published: March 25, 2014

Programmable redox state of the nickel ion chain in DNA.

Programmable redox state of the nickel ion chain in DNA.

Journal: Nano letters

Published: January 25, 2014

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Last Updated: 09/26/2026