Xinnan Lin

The Shenzhen Key Lab Of Advanced Electron Device And Integration
Shenzhen, 518055, China

Last Updated: 09/26/2026

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Found 11 publications

1.3 kV Vertical GaN-Based Trench MOSFETs on 4-Inch Free Standing GaN Wafer.

1.3 kV Vertical GaN-Based Trench MOSFETs on 4-Inch Free Standing GaN Wafer.

Journal: Nanoscale research letters

Published: November 09, 2021

Bifunctional homologous alkali-metal artificial synapse with regenerative ability and mechanism imitation of voltage-gated ion channels.

Bifunctional homologous alkali-metal artificial synapse with regenerative ability and mechanism imitation of voltage-gated ion channels.

Journal: Materials horizons

Published: November 01, 2021

Robust Simulations of Nanoscale Phase Change Memory: Dynamics and Retention.

Robust Simulations of Nanoscale Phase Change Memory: Dynamics and Retention.

Journal: Nanomaterials (Basel, Switzerland)

Published: September 17, 2021

Achieving complementary resistive switching and multi-bit storage goals by modulating the dual-ion reaction through supercritical fluid-assisted ammoniation.

Achieving complementary resistive switching and multi-bit storage goals by modulating the dual-ion reaction through supercritical fluid-assisted ammoniation.

Journal: Nanoscale

Published: September 03, 2021

Low-temperature supercritical dehydroxylation for achieving an ultra-low subthreshold swing of thin-film transistors.

Low-temperature supercritical dehydroxylation for achieving an ultra-low subthreshold swing of thin-film transistors.

Journal: Nanoscale

Published: February 10, 2021

Unveiling the influence of surrounding materials and realization of multi-level storage in resistive switching memory.

Unveiling the influence of surrounding materials and realization of multi-level storage in resistive switching memory.

Journal: Nanoscale

Published: October 08, 2020

The study of bending properties of monolayer MoS2 in non-collinear electrodes using first principles theory.

The study of bending properties of monolayer MoS2 in non-collinear electrodes using first principles theory.

Journal: Physical chemistry chemical physics : PCCP

Published: September 24, 2020

Variable-temperature activation energy extraction to clarify the physical and chemical mechanisms of the resistive switching process.

Variable-temperature activation energy extraction to clarify the physical and chemical mechanisms of the resistive switching process.

Journal: Nanoscale

Published: July 18, 2020

An indirect way to achieve comprehensive performance improvement of resistive memory: when hafnium meets ITO in an electrode.

An indirect way to achieve comprehensive performance improvement of resistive memory: when hafnium meets ITO in an electrode.

Journal: Nanoscale

Published: January 24, 2020

Hafnium nanocrystals observed in a HfTiO compound film bring about excellent performance of flexible selectors in memory integration.

Hafnium nanocrystals observed in a HfTiO compound film bring about excellent performance of flexible selectors in memory integration.

Journal: Nanoscale

Published: October 28, 2019

Black Phosphorus Quantum Dots for Hole Extraction of Typical Planar Hybrid Perovskite Solar Cells.

Black Phosphorus Quantum Dots for Hole Extraction of Typical Planar Hybrid Perovskite Solar Cells.

Journal: The journal of physical chemistry letters

Published: January 14, 2017

Showing 1-11 of 11

Last Updated: 09/26/2026