Zhenzhen Kong
Beijing, China
Last Updated: 09/26/2026
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Found 44 publications
High-fidelity geometric quantum gates exceeding 99.9% in germanium quantum dots.
Journal: Nature communications
Published: March 05, 2025
High-performance GeSi/Ge multi-quantum well photodetector on a Ge-buffered Si substrate.
Journal: Optics letters
Published: May 15, 2024
CMOS Scaling for the 5 nm Node and Beyond: Device, Process and Technology.
Journal: Nanomaterials (Basel, Switzerland)
Published: March 19, 2024
Demonstration of Germanium Vertical Gate-All-Around Field-Effect Transistors Featured by Self-Aligned High-κ Metal Gates with Record High Performance.
Journal: ACS nano
Published: October 12, 2023
Study of Selective Dry Etching Effects of 15-Cycle Si0.7Ge0.3/Si Multilayer Structure in Gate-All-Around Transistor Process.
Journal: Nanomaterials (Basel, Switzerland)
Published: June 16, 2023
Investigation on Recrystallization Channel for Vertical C-Shaped-Channel Nanosheet FETs by Laser Annealing.
Journal: Nanomaterials (Basel, Switzerland)
Published: May 11, 2023
High-Quality Recrystallization of Amorphous Silicon on Si (100) Induced via Laser Annealing at the Nanoscale.
Journal: Nanomaterials (Basel, Switzerland)
Published: May 11, 2023
Corrigendum to "β-arrestin1 promotes epithelial-mesenchymal transition via modulating GSK-3β/β-catenin pathway in prostate cancer cells".
Journal: Biochemical and biophysical research communications
Published: September 06, 2022
Reduced Dislocation of GaAs Layer Grown on Ge-Buffered Si (001) Substrate Using Dislocation Filter Layers for an O-Band InAs/GaAs Quantum Dot Narrow-Ridge Laser.
Journal: Micromachines
Published: August 03, 2022
Dual-Step Selective Homoepitaxy of Ge with Low Defect Density and Modulated Strain Based on Optimized Ge/Si Virtual Substrate.
Journal: Materials (Basel, Switzerland)
Published: April 07, 2022
Investigation of the Integration of Strained Ge Channel with Si-Based FinFETs.
Journal: Nanomaterials (Basel, Switzerland)
Published: March 19, 2022
Growth and Strain Modulation of GeSn Alloys for Photonic and Electronic Applications.
Journal: Nanomaterials (Basel, Switzerland)
Published: January 29, 2022
Last Updated: 09/26/2026